TP65H070LSG
GANFET N-CH 650V 25A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm TP65H070L is a 650V N-Channel GaNFET designed for high-efficiency power conversion applications. This component, identified by part number TP65H070LSG, features a continuous drain current of 25A (Tc) and a maximum power dissipation of 96W (Tc) in a surface mount 3-PQFN (8x8) package. With a low on-resistance of 85mOhm (Max) @ 16A, 10V, and a gate charge of 9.3 nC @ 10V, it offers superior switching performance. Key electrical characteristics include a drain-source voltage (Vdss) of 650V and an input capacitance (Ciss) of 600 pF @ 400V. The TP65H070LSG operates across a temperature range of -55°C to 150°C (TJ) and is suitable for demanding sectors such as datacenter power, industrial power supplies, and automotive applications.
Additional Information
Series: TP65H070LRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
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