TP65H070G4QS-TR
650 V 29 A GAN FETManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 29A (Tc) 96W (Tc) Surface Mount TOLL
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
| Qualification | - |
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