TPD3215M
GANFET 2N-CH 600V 70A MODULEManufacturer: Transphorm
Categories: FET, MOSFET Arrays
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Transphorm's TPD3215M is a 600V, 70A GaNFET dual N-channel module, configured as a half-bridge. This through-hole component delivers a maximum power of 470W with a low on-resistance of 34mOhm at 30A and 8V. Featuring a gate charge of 28nC and input capacitance of 2260pF, it operates across a wide temperature range of -40°C to 150°C. This module is suitable for high-efficiency power conversion applications across various industries, including electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | 470W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Module |
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