RN2421(TE85L,F)
TRANS PREBIAS PNP 50V 0.8A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2421-TE85L-F- is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for various electronic circuits. The internal base resistors (R1 and R2) are rated at 1 kOhm each, simplifying bias network design. The transistor type is PNP, pre-biased, and it is housed in an S-Mini package (TO-236-3, SC-59, SOT-23-3) supplied on tape and reel. This component finds application in industrial automation, consumer electronics, and communication infrastructure where efficient switching and signal amplification are required.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 2mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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