RN2411,LF
TRANS PREBIAS PNP 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2411-LF is a PNP pre-biased bipolar junction transistor. This surface mount component, housed in an S-Mini package (TO-236-3, SC-59, SOT-23-3), offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device features a DC current gain (hFE) minimum of 120 at 1 mA, 5 V, and a transition frequency of 200 MHz. The integrated base resistor (R1) is 10 kOhms, and the saturation voltage (Vce(sat)) is a maximum of 300 mV at 250 µA, 5 mA. With a maximum power dissipation of 200 mW, the RN2411-LF is suitable for applications requiring simplified circuit design in areas such as consumer electronics and industrial control. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
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