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RN2411,LF

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RN2411,LF

TRANS PREBIAS PNP 50V 0.1A SMINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2411-LF is a PNP pre-biased bipolar junction transistor. This surface mount component, housed in an S-Mini package (TO-236-3, SC-59, SOT-23-3), offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device features a DC current gain (hFE) minimum of 120 at 1 mA, 5 V, and a transition frequency of 200 MHz. The integrated base resistor (R1) is 10 kOhms, and the saturation voltage (Vce(sat)) is a maximum of 300 mV at 250 µA, 5 mA. With a maximum power dissipation of 200 mW, the RN2411-LF is suitable for applications requiring simplified circuit design in areas such as consumer electronics and industrial control. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Supplier Device PackageS-Mini
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms

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