RN2410,LXHF
TRANS PREBIAS PNP 50V SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN2410-LXHF is a PNP pre-biased bipolar junction transistor. This AEC-Q101 qualified component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. With a transition frequency of 200 MHz and a power dissipation of 200 mW, it offers a minimum DC current gain (hFE) of 120 at 1 mA and 5 V. The integrated base resistor (R1) is 4.7 kOhms. The device is supplied in an S-Mini surface mount package (TO-236-3, SC-59, SOT-23-3) and is available on tape and reel. This transistor is suitable for applications in the automotive industry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Supplier Device Package | S-Mini |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Qualification | AEC-Q101 |
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