RN2404,LF
TRANS PREBIAS PNP 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN2404-LF is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Featuring an integrated base resistor (R1) of 47 kOhms and an emitter-base resistor (R2) of 47 kOhms, it simplifies circuit design by eliminating external biasing components. The device exhibits a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, with a transition frequency of 200 MHz. Power dissipation is rated at 200 mW. The S-Mini package, equivalent to TO-236-3 or SC-59, is supplied on tape and reel. This transistor is suitable for use in various electronic systems, including consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
RN2417(TE85L,F)
TRANS PREBIAS PNP 50V SMINI
RN2106MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESM
RN2115MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
