RN2402S,LF(D
TRANS PREBIAS PNP 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage's RN2402S-LF-D is a PNP bipolar junction transistor (BJT) featuring integrated base resistors for simplified circuit design. This pre-biased transistor operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 200 MHz and a power dissipation of 200 mW. The device includes internal base resistors of 10 kOhms (R1) and 10 kOhms (R2), facilitating direct connection to a voltage source for biasing. The RN2402S-LF-D is housed in an S-Mini (TO-236-3, SC-59, SOT-23-3) surface-mount package, supplied on tape and reel. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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