RN2104ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2104ACT-TPL3- is a PNP pre-biased bipolar junction transistor designed for signal switching and amplification applications. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA, with a power dissipation of 100 mW. The integrated base resistor (R1) is 47 kOhms and the emitter-base resistor (R2) is 47 kOhms, facilitating easy circuit design for direct interface with microcontrollers. Saturation voltage is maintained at 150 mV at 250 µA base current and 5 mA collector current. The current gain (hFE) is a minimum of 80 at 10 mA collector current and 5 V collector-emitter voltage. Packaged in a compact CST3 (SC-101, SOT-883) surface-mount format and supplied on tape and reel, this transistor is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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