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RN2103MFV,L3F(CT

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RN2103MFV,L3F(CT

TRANS PREBIAS PNP 50V 0.1A VESM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2103MFV-L3F-CT is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 250MHz and a maximum power dissipation of 150mW. It includes internal base resistors (R1 = 22 kOhms) and emitter base resistors (R2 = 22 kOhms), simplifying circuit design by eliminating the need for external biasing components. The RN2103MFV-L3F-CT is supplied in a VESM package, specifically SOT-723, on tape and reel. This transistor is suitable for use in various applications including general-purpose switching and amplification circuits within the consumer electronics and industrial automation sectors. Its pre-biased configuration ensures a stable operating point without external resistors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Supplier Device PackageVESM
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms

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