RN2103MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2103MFV-L3F-CT is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 250MHz and a maximum power dissipation of 150mW. It includes internal base resistors (R1 = 22 kOhms) and emitter base resistors (R2 = 22 kOhms), simplifying circuit design by eliminating the need for external biasing components. The RN2103MFV-L3F-CT is supplied in a VESM package, specifically SOT-723, on tape and reel. This transistor is suitable for use in various applications including general-purpose switching and amplification circuits within the consumer electronics and industrial automation sectors. Its pre-biased configuration ensures a stable operating point without external resistors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |