RN2102MFV,L3XHF(CT
TRANS PREBIAS PNP 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2102MFV-L3XHF-CT is a PNP pre-biased bipolar junction transistor. This AEC-Q101 qualified component is designed for automotive applications and features an integrated base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 10 kOhms for simplified circuit design. The transistor offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Its transition frequency reaches 250 MHz, with a maximum power dissipation of 150 mW. The device is supplied in a VESM package, also known as SOT-723, suitable for surface mounting and delivered on tape and reel. This component is commonly utilized in automotive control and signal processing applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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