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RN2102MFV,L3XHF(CT

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RN2102MFV,L3XHF(CT

TRANS PREBIAS PNP 50V 0.1A VESM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2102MFV-L3XHF-CT is a PNP pre-biased bipolar junction transistor. This AEC-Q101 qualified component is designed for automotive applications and features an integrated base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 10 kOhms for simplified circuit design. The transistor offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Its transition frequency reaches 250 MHz, with a maximum power dissipation of 150 mW. The device is supplied in a VESM package, also known as SOT-723, suitable for surface mounting and delivered on tape and reel. This component is commonly utilized in automotive control and signal processing applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Supplier Device PackageVESM
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
QualificationAEC-Q101

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