RN2101ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN2101ACT-TPL3- is a PNP Bipolar Junction Transistor (BJT) featuring integrated base resistors for simplified circuit design. This pre-biased transistor is rated for a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. With a power dissipation of 100mW, it is suitable for various low-power applications. The device offers a minimum DC current gain (hFE) of 30 at 10mA and 5V. Key specifications include a Vce(sat) of 150mV at 500µA/5mA, and a collector cutoff current of 500nA. The internal base resistors are specified as R1 = 4.7 kOhms and R2 = 4.7 kOhms. This component is supplied in a CST3 package, also known as SC-101 or SOT-883, facilitating surface mount assembly. It is available on tape and reel. This transistor finds application in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |