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RN2101ACT(TPL3)

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RN2101ACT(TPL3)

TRANS PREBIAS PNP 50V 0.08A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2101ACT-TPL3- is a PNP Bipolar Junction Transistor (BJT) featuring integrated base resistors for simplified circuit design. This pre-biased transistor is rated for a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. With a power dissipation of 100mW, it is suitable for various low-power applications. The device offers a minimum DC current gain (hFE) of 30 at 10mA and 5V. Key specifications include a Vce(sat) of 150mV at 500µA/5mA, and a collector cutoff current of 500nA. The internal base resistors are specified as R1 = 4.7 kOhms and R2 = 4.7 kOhms. This component is supplied in a CST3 package, also known as SC-101 or SOT-883, facilitating surface mount assembly. It is available on tape and reel. This transistor finds application in areas such as consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max100 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms

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