RN1444ATE85LF
TRANS PREBIAS NPN 20V 0.3A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1444ATE85LF is an NPN pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 300mA. The integrated base resistor, R1, is 2.2 kOhms, facilitating simplified circuit design. With a transition frequency of 30 MHz and a maximum power dissipation of 200mW, it is suitable for use in consumer electronics, industrial control systems, and communication equipment. The transistor type is NPN - Pre-Biased, and it is supplied in an S-Mini package (TO-236-3, SC-59, SOT-23-3) on tape and reel (TR). Key parameters include a minimum DC current gain (hFE) of 200 at 4mA and 2V, and a saturation voltage (Vce Sat) of 100mV at 3mA and 30mA. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 200 mW |
| Frequency - Transition | 30 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
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