RN1441ATE85LF
TRANS PREBIAS NPN 20V 0.3A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1441ATE85LF is an NPN - Pre-Biased Bipolar Transistor (BJT). This device features a collector-emitter breakdown voltage of 20 V and a maximum collector current of 300 mA. It offers a DC current gain (hFE) of 200 at 4 mA, 2 V and a transition frequency of 30 MHz. The component has a maximum power dissipation of 200 mW. Integrated within the transistor is a base resistor (R1) with a value of 5.6 kOhms. Saturation voltage (Vce Sat) is specified at 100 mV at 3 mA, 30 mA. The collector cutoff current (ICBO) is a maximum of 100 nA.
This component is supplied in a S-Mini (TO-236-3, SC-59, SOT-23-3) surface mount package. It is offered in Tape & Reel (TR) packaging. The Toshiba Semiconductor and Storage RN1441ATE85LF finds application in various electronic circuits, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 200 mW |
| Frequency - Transition | 30 MHz |
| Resistor - Base (R1) | 5.6 kOhms |
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