RN1415,LF
TRANS PREBIAS NPN 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1415-LF is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mounting. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring fast switching and moderate signal amplification. The integrated base resistor (R1) is 2.2 kOhms and the emitter-base resistor (R2) is 10 kOhms, contributing to a minimum DC current gain (hFE) of 50 at 10mA, 5V. The device is supplied in an S-Mini package (TO-236-3, SC-59, SOT-23-3) on tape and reel. This transistor finds use in various electronic circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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