RN1412TE85LF
TRANS PREBIAS NPN 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1412TE85LF is an NPN pre-biased bipolar junction transistor (BJT). This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The device includes an integrated base resistor of 22 kOhms, simplifying circuit design. The RN1412TE85LF is provided in an S-Mini surface mount package (TO-236-3, SC-59, SOT-23-3) and is supplied on tape and reel. This transistor is suitable for applications in consumer electronics and industrial control systems requiring simple switching and amplification functions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 22 kOhms |
Request a Quote
Clients Also Buy
RN2103MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESM
RN2308,LXHF
TRANS PREBIAS PNP 50V 0.1A SC70
RN1107MFV,L3XHF(CT
TRANS PREBIAS NPN 50V 0.1A VESM
