RN1402,LF
TRANS PREBIAS NPN 50V 0.1A SMINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1402-LF is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. Featuring an integrated base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 10 kOhms, it simplifies circuit design by providing built-in biasing. The RN1402-LF exhibits a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a transition frequency of 250 MHz. Its power dissipation is rated at 200 mW, and it comes in an S-Mini package (TO-236-3, SC-59, SOT-23-3), supplied on tape and reel. This transistor is suitable for use in various industrial and consumer electronics applications requiring compact, pre-biased transistor solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |