RN1118(T5L,F,T)
TRANS PREBIAS NPN 50V 0.1A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1118-T5L-F-T is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The built-in base resistors include R1 at 47 kOhms and R2 at 10 kOhms, providing a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V collector-emitter voltage. With a transition frequency of 250 MHz and a maximum power dissipation of 100mW, the RN1118-T5L-F-T is suitable for use in consumer electronics and industrial control systems. It is supplied in an SC-75, SOT-416 package, delivered on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | SSM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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