RN1117(T5L,F,T)
TRANS PREBIAS NPN 50V 0.1A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1117-T5L-F-T- is an NPN pre-biased bipolar transistor designed for surface mount applications. This component operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It features a transition frequency of 250 MHz and a maximum power dissipation of 100mW. The internal base resistors are specified as R1 = 10 kOhms and R2 = 4.7 kOhms, facilitating simplified circuit design by eliminating the need for external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10mA and 5V, with a saturation voltage of 300mV at 250µA and 5mA. The SC-75, SOT-416 package is supplied in tape and reel (TR) for automated assembly. This device finds application in various electronic systems requiring compact biasing and switching capabilities, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | SSM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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