RN1115MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1115MFV-L3F is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The RN1115MFV-L3F offers a DC current gain (hFE) of at least 50 at 10 mA and 5 V, with a transition frequency of 250 MHz. It is supplied in a VESM package, specified as SOT-723, suitable for surface mounting and delivered on tape and reel. The internal base resistors are R1 at 2.2 kOhms and R2 at 10 kOhms. Maximum power dissipation is 150 mW. This device is commonly employed in applications requiring simple switching and amplification functions across various electronic systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
RN2417(TE85L,F)
TRANS PREBIAS PNP 50V SMINI
RN2106MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESM
RN2115MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
