RN1110(T5L,F,T)
TRANS PREBIAS NPN 50V 0.1A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1110-T5L-F-T is an NPN pre-biased bipolar junction transistor. This surface mount component, housed in an SC-75 (SOT-416) package, offers a 50V collector-emitter breakdown voltage. It supports a continuous collector current of up to 100mA and features a transition frequency of 250MHz. The device has a maximum power dissipation of 100mW. Key specifications include a minimum DC current gain (hFE) of 120 at 1mA and 5V, and a saturation voltage of 300mV at 250µA and 5mA. The integrated base resistor (R1) is 4.7 kOhms. This component is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Supplier Device Package | SSM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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