RN1109ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1109ACT-TPL3- is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The integrated base resistors, R1 of 47 kOhms and R2 of 22 kOhms, facilitate simplified circuit design. With a maximum power dissipation of 100mW and a low collector cutoff current of 500nA, this transistor is suitable for applications requiring efficient switching and signal amplification. The Vce(sat) is specified at 150mV at 250µA base and 5mA collector current. It is supplied in a CST3 package, corresponding to the SC-101 or SOT-883 footprint, on a Tape & Reel (TR). This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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