RN1109(T5L,F,T)
TRANS PREBIAS NPN 50V 0.1A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage presents the RN1109-T5L-F-T-, an NPN pre-biased bipolar junction transistor. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 250MHz and a maximum power dissipation of 100mW. The internal base resistors are specified as R1 at 47 kOhms and R2 at 22 kOhms. This device is supplied in a surface mount SC-75 (SOT-416) package, delivered on tape and reel. The RN1109-T5L-F-T- is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Supplier Device Package | SSM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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