RN1108ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1108ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. The integrated base resistors, R1 (22 kOhms) and R2 (47 kOhms), provide a pre-bias configuration simplifying circuit design. It offers a minimum DC current gain (hFE) of 80 at 10 mA collector current and 5 V Vce. The transistor exhibits a saturation voltage (Vce Sat) of 150 mV at 250 µA base current and 5 mA collector current, with a maximum power dissipation of 100 mW. Packaged in a CST3 (SC-101, SOT-883) and supplied on tape and reel, this device is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
RN1406S,LF(D
TRANS PREBIAS NPN 50V 0.1A SMINI
RN1118MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM
RN2417(TE85L,F)
TRANS PREBIAS PNP 50V SMINI
