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RN1106ACT(TPL3)

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RN1106ACT(TPL3)

TRANS PREBIAS NPN 50V 0.08A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1106ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 80mA. The integrated base resistors, R1 at 4.7 kOhms and R2 at 47 kOhms, provide a fixed bias condition, simplifying circuit design and reducing component count. With a maximum power dissipation of 100mW and a Vce saturation of 150mV at 2mA/5mA, this device is suitable for various signal switching and amplification tasks. The SC-101, SOT-883 package, also referred to as CST3, is supplied on tape and reel. This transistor finds application in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max100 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms

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