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RN1105ACT(TPL3)

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RN1105ACT(TPL3)

TRANS PREBIAS NPN 50V 0.08A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1105ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT). This device features a Collector-Emitter Breakdown Voltage (Vce) of 50 V and a maximum Collector Current (Ic) of 80 mA. It offers a power dissipation of 100 mW and a Collector-Emitter Saturation Voltage (Vce(sat)) of 150 mV at 250 µA and 5 mA. The DC current gain (hFE) is a minimum of 80 at 10 mA and 5 V. The internal base resistance (R1) is 2.2 kOhms, and the emitter base resistance (R2) is 47 kOhms. This component is housed in a CST3 surface mount package, also known as SC-101 or SOT-883, and is supplied on tape and reel. It is commonly utilized in industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max100 mW
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms

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