RN1105ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1105ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT). This device features a Collector-Emitter Breakdown Voltage (Vce) of 50 V and a maximum Collector Current (Ic) of 80 mA. It offers a power dissipation of 100 mW and a Collector-Emitter Saturation Voltage (Vce(sat)) of 150 mV at 250 µA and 5 mA. The DC current gain (hFE) is a minimum of 80 at 10 mA and 5 V. The internal base resistance (R1) is 2.2 kOhms, and the emitter base resistance (R2) is 47 kOhms. This component is housed in a CST3 surface mount package, also known as SC-101 or SOT-883, and is supplied on tape and reel. It is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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