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RN1104ACT(TPL3)

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RN1104ACT(TPL3)

TRANS PREBIAS NPN 50V 0.08A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1104ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA, with a power dissipation of 100mW. The integrated bias resistors, R1 and R2, are specified at 47 kOhms each. The transistor exhibits a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage. Collector cutoff current is a maximum of 500nA. Saturation voltage (Vce) is a maximum of 150mV at 250µA base current and 5mA collector current. The device is supplied in a CST3 package, equivalent to SC-101 or SOT-883, on tape and reel. This component is suitable for use in general-purpose amplification and switching circuits across various industrial applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max100 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms

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