RN1104,LXHF(CT
TRANS PREBIAS NPN 50V 0.1A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1104-LXHF-CT is an NPN pre-biased bipolar junction transistor. This AEC-Q101 qualified component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 250MHz with a maximum power dissipation of 100mW. It incorporates internal base resistors of 47 kOhms (R1) and 47 kOhms (R2), simplifying circuit design. The saturation voltage (Vce Sat) is a maximum of 300mV at 250µA base current and 5mA collector current. The device is supplied in an SSM package (SC-75, SOT-416) on tape and reel. This transistor is suitable for automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | SSM |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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