RN1103ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1103ACT-TPL3- is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 80mA. The device is specified with a maximum power dissipation of 100mW. Internal base resistors (R1 and R2) are configured at 22 kOhms each, facilitating simplified circuit design by eliminating the need for external biasing components. The minimum DC Current Gain (hFE) is 70 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 150mV at 250µA base current and 5mA collector current. The transistor is provided in a CST3 package, suitable for automated assembly processes. This component is utilized in various electronics manufacturing sectors requiring compact and efficient switching or amplification functions. The part is supplied on a Tape & Reel (TR) for high-volume production.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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