RN1102MFV,L3XHF(CT
TRANS PREBIAS NPN 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1102MFV-L3XHF-CT is an NPN pre-biased bipolar transistor designed for surface mount applications. This Automotive Grade component, qualified to AEC-Q101, features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V collector-emitter voltage. The internal base resistor (R1) is 10 kOhms, and the emitter base resistor (R2) is 10 kOhms. With a maximum power dissipation of 150 mW and a Vce saturation of 300mV at 500µA base current and 5mA collector current, this transistor is suitable for use in automotive and industrial control systems. The device is supplied in a VESM package, delivered on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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