RN1102ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1102ACT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The integrated base resistors, R1 and R2, are both specified at 10 kOhms, simplifying circuit design. With a maximum power dissipation of 100mW and a Vce(sat) of 150mV at 250µA/5mA, it offers efficient operation. The minimum DC current gain (hFE) is 50 at 10mA/5V, and the collector cutoff current is a maximum of 500nA. Packaged in a CST3 (SC-101, SOT-883) and supplied on tape and reel, this transistor is suitable for use in various consumer electronics and industrial control applications requiring simplified biasing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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