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RN1101MFV,L3F(CT

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RN1101MFV,L3F(CT

TRANS PREBIAS NPN 50V 0.1A VESM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN Pre-Biased Transistor, part number RN1101MFV-L3F-CT. This device features an integrated base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 4.7 kOhms, simplifying circuit design by eliminating external bias components. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a power dissipation of 150 mW, it is suitable for low-power applications. The DC current gain (hFE) is a minimum of 30 at 10 mA collector current and 5 V Vce. Saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 5 mA collector current. The cutoff current (Ic) is a maximum of 500 nA. This component is provided in a VESM (SOT-723) package for surface mounting and is supplied on tape and reel. It finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Supplier Device PackageVESM
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms

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