RN1101MFV,L3F(CT
TRANS PREBIAS NPN 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Pre-Biased Transistor, part number RN1101MFV-L3F-CT. This device features an integrated base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 4.7 kOhms, simplifying circuit design by eliminating external bias components. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a power dissipation of 150 mW, it is suitable for low-power applications. The DC current gain (hFE) is a minimum of 30 at 10 mA collector current and 5 V Vce. Saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 5 mA collector current. The cutoff current (Ic) is a maximum of 500 nA. This component is provided in a VESM (SOT-723) package for surface mounting and is supplied on tape and reel. It finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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