RN1101MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1101MFV-L3F is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The internal base resistor (R1) is 4.7 kOhms and the emitter base resistor (R2) is also 4.7 kOhms, providing a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V Vce. With a maximum power dissipation of 150mW and a Vce(sat) of 300mV at 500µA base current and 5mA collector current, it is suitable for various signal switching and amplification tasks. The device is supplied in a VESM package, compatible with tape and reel packaging for automated assembly. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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