RN1101CT(TPL3)
TRANS PREBIAS NPN 20V 0.05A CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single, Pre-Biased Bipolar Transistors
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Toshiba Semiconductor and Storage RN1101CT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 50mA. The integrated base resistors (R1 = 4.7 kOhms, R2 = 4.7 kOhms) simplify circuit design by eliminating the need for external biasing components. With a power dissipation of 50mW and a Vce saturation of 150mV at 250µA/5mA, it offers efficient performance in compact designs. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10mA and 5V. Packaged in a CST3 (SC-101, SOT-883) surface-mount case and supplied on tape and reel, this device is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | CST3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 50 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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