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RN1101CT(TPL3)

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RN1101CT(TPL3)

TRANS PREBIAS NPN 20V 0.05A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1101CT-TPL3- is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 50mA. The integrated base resistors (R1 = 4.7 kOhms, R2 = 4.7 kOhms) simplify circuit design by eliminating the need for external biasing components. With a power dissipation of 50mW and a Vce saturation of 150mV at 250µA/5mA, it offers efficient performance in compact designs. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10mA and 5V. Packaged in a CST3 (SC-101, SOT-883) surface-mount case and supplied on tape and reel, this device is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max50 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms

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