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RN1101ACT(TPL3)

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RN1101ACT(TPL3)

TRANS PREBIAS NPN 50V 0.08A CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1101ACT-TPL3- is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The internal base resistor (R1) is 4.7 kOhms, and the emitter-base resistor (R2) is 4.7 kOhms, facilitating simple circuit configurations. It offers a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V Vce. The transistor has a maximum power dissipation of 100mW and a collector cutoff current of 500nA. Saturation voltage (Vce Sat) is specified at a maximum of 150mV at 500µA base current and 5mA collector current. The device is supplied in a CST3 package, also identified as SC-101 or SOT-883, presented on a Tape & Reel (TR). This component is suitable for use in industrial automation, consumer electronics, and communication systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Supplier Device PackageCST3
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max100 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms

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