GT8G133(TE12L,Q)
IGBT 400V 600MW 8TSSOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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Toshiba Semiconductor and Storage GT8G133-TE12L-Q- is a 400V IGBT designed for high-efficiency power switching applications. This device features a collector-emitter voltage (Vce) of 2.9V at 4V gate voltage and 150A collector current, with a pulsed collector current (Icm) capability of 150A. The input type is standard, and the IGBT is optimized for surface mounting within an 8-TSSOP package, measuring 4.40mm in width. Operating at a maximum junction temperature of 150°C, the GT8G133-TE12L-Q- offers typical turn-on and turn-off times of 1.7µs and 2µs respectively at 25°C. Its maximum power dissipation is rated at 600 mW. This component is utilized in industrial automation, power supplies, and motor control systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 4V, 150A |
| Supplier Device Package | 8-TSSOP |
| IGBT Type | - |
| Td (on/off) @ 25°C | 1.7µs/2µs |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 600 mW |
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