GT60N321(Q)
IGBT 1000V 60A 170W TO3P LHManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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Toshiba Semiconductor and Storage GT60N321-Q- is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 60A, with a pulsed capability of 120A. The on-state voltage (Vce(on)) is a maximum of 2.8V at 15V gate-emitter voltage and 60A collector current. With a maximum power dissipation of 170W, it is suitable for operation up to 150°C junction temperature. The fast switching characteristics are indicated by typical turn-on delay of 330ns and turn-off delay of 700ns. This through-hole device is supplied in a TO-3P(LH) package. Applications for this IGBT include motor control, power supplies, and industrial inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 2.5 µs |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Supplier Device Package | TO-3P(LH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 330ns/700ns |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 170 W |
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