GT50N322A
IGBT 1000V 50A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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IGBT 1000 V 50 A 156 W Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 800 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Supplier Device Package | TO-3P(N) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 156 W |
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