GT50J121(Q)
IGBT 600V 50A 240W TO3P LHManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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Toshiba Semiconductor and Storage GT50J121-Q- is a 600V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This TO-3P(LH) package device offers a continuous collector current of 50A and a pulsed collector current of 100A, with a maximum power dissipation of 240W. Key performance characteristics include a Vce(on) of 2.45V at 15V gate-emitter voltage and 50A collector current. Switching characteristics are rated at 90ns turn-on and 300ns turn-off at 25°C under a 300V, 50A, 13 Ohm, 15V test condition, with switching energy of 1.3mJ (on) and 1.34mJ (off). The device is suitable for operation up to a junction temperature of 150°C. It finds application in power conversion systems, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Supplier Device Package | TO-3P(LH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 90ns/300ns |
| Switching Energy | 1.3mJ (on), 1.34mJ (off) |
| Test Condition | 300V, 50A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 240 W |
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