GT40QR21(STA1,E,D
IGBT 1200V 40A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
Quality Control: Learn More
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 600 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | TO-3P(N) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | -, 290µJ (off) |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 230 W |
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