GT30J65MRB,S1E
650V SILICON N-CHANNEL IGBT, TO-Manufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
Quality Control: Learn More
IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Supplier Device Package | TO-3P(N) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 75ns/400ns |
| Switching Energy | 1.4mJ (on), 220µJ (off) |
| Test Condition | 400V, 15A, 56Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
GT30J341,Q
IGBT 600V 59A TO3P
GT30N135SRA,S1E
IGBT 1350V 60A TO247
GT8G133(TE12L,Q)
IGBT 400V 600MW 8TSSOP
