GT30J341,Q
IGBT 600V 59A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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IGBT 600 V 59 A 230 W Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-3P(N) |
| Td (on/off) @ 25°C | 80ns/280ns |
| Switching Energy | 800µJ (on), 600µJ (off) |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Current - Collector (Ic) (Max) | 59 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
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