GT30J121(Q)
IGBT 600V 30A 170W TO3PNManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
Quality Control: Learn More
IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
| Supplier Device Package | TO-3P(N) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 90ns/300ns |
| Switching Energy | 1mJ (on), 800µJ (off) |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 170 W |
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