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GT20J341,S4X(S

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GT20J341,S4X(S

DISCRETE IGBT TRANSISTOR TO-220S

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single IGBTs

Quality Control: Learn More

IGBT 600 V 20 A 45 W Through Hole TO-220SIS

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)90 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-220SIS
IGBT Type-
Td (on/off) @ 25°C60ns/240ns
Switching Energy500µJ (on), 400µJ (off)
Test Condition300V, 20A, 33Ohm, 15V
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max45 W

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