GT10J312(Q)
IGBT 600V 10A 60W TO220SMManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
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Toshiba Semiconductor and Storage presents the GT10J312-Q-, a 600V, 10A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a maximum collector power dissipation of 60W and can handle pulsed collector currents up to 20A. The Vce(on) is specified at 2.7V at 15V gate-emitter voltage and 10A collector current, with typical turn-on and turn-off delays of 400ns at 25°C. Operating at a junction temperature up to 150°C, this IGBT is suitable for use in industrial motor control and power supply circuits. It is available in a TO-262 package with through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Supplier Device Package | - |
| IGBT Type | - |
| Td (on/off) @ 25°C | 400ns/400ns |
| Switching Energy | - |
| Test Condition | 300V, 10A, 100Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 60 W |
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