GT10G131(TE12L,Q)
IGBT 400V 1W 8-SOICManufacturer: Toshiba Semiconductor and Storage
Categories: Single IGBTs
Quality Control: Learn More
Toshiba Semiconductor and Storage GT10G131-TE12L-Q- is a 400V, 1W Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component, packaged in an 8-SOP (5.5x6.0) with dimensions of 8-SOIC (0.173", 4.40mm Width), offers a collector-emitter voltage of 400V. It features a standard input type and can operate at temperatures up to 150°C (TJ). The device exhibits a Vce(on) of 2.3V at 4V Vge and 200A Ic, with typical switching times of 3.1µs for turn-on and 2µs for turn-off at 25°C. The pulsed collector current (Icm) is rated at 200A. This IGBT is commonly utilized in power switching applications within industrial and automotive sectors. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 3.1µs/2µs |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 1 W |
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