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XPW4R10ANB,L1XHQ

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XPW4R10ANB,L1XHQ

MOSFET N-CH 100V 70A AEC-Q101

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 70A 170W (Tc) Surface Mount 8-DSOP Advance

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A
Rds On (Max) @ Id, Vgs4.1mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device Package8-DSOP Advance
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4970 pF @ 10 V
QualificationAEC-Q101

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