XPJR6604PB,LXHQ
40V; UMOS9; 0.66MOHM; S-TOGLManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage XPJR6604PB-LXHQ is an N-Channel MOSFET from the U-MOSIX-H series. This component features a 40V drain-source voltage (Vdss) and a low on-resistance of 0.66mOhm at 100A and 10V gate-source voltage. It offers a continuous drain current of 200A (Ta) and a maximum power dissipation of 375W (Tc). The device utilizes a surface mount S-TOGL™ package and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Key parameters include a gate charge of 128 nC (max) at 10V and input capacitance of 11380 pF (max) at 10V. The operating temperature range extends to 175°C.
Additional Information
Series: U-MOSIX-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.66mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | S-TOGL™ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11380 pF @ 10 V |
| Qualification | AEC-Q101 |
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