TW048N65C,S1F
G3 650V SIC-MOSFET TO-247 48MOHManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 40A (Tc) 132W (Tc) Through Hole TO-247
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 132W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.6mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1362 pF @ 400 V |
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