TPW5200FNH,L1Q
PB-F POWER MOSFET TRANSISTOR DSOManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPW5200FNH-L1Q is an N-Channel U-MOSVIII-H series power MOSFET designed for high-efficiency power conversion applications. This device features a 250V drain-source breakdown voltage and a continuous drain current capability of 26A at 25°C (Tc). The low on-resistance of 52mOhm at 13A and 10V gate drive voltage contributes to minimized conduction losses. With a maximum power dissipation of 142W (Tc), this MOSFET is suitable for demanding thermal environments. Key parameters include a gate charge of 22nC at 10V and input capacitance of 2200pF at 100V. The TPW5200FNH-L1Q is provided in an 8-DSOP Advance surface mount package, compatible with Tape & Reel (TR) packaging. This component finds application in industrial power supplies, electric vehicle charging, and datacenter power systems.
Additional Information
Series: U-MOSVIII-HRoHS Status: unknownManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DSOP Advance |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V |
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